PART |
Description |
Maker |
IS61NVP25636A-200TQI IS61NLP25636A-200B2I IS61NLP2 |
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 3.1 ns, PQFP100 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 3.1 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 2.6 ns, PQFP100 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 3.1 ns, PBGA165 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 2.6 ns, PBGA165 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 3.1 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 2.6 ns, PQFP100 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 3.1 ns, PQFP100 256K X 36 ZBT SRAM, 3.1 ns, PBGA165
|
Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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AS7C33256PFS18A-166TQI AS7C33256PFS16A AS7C33256PF |
3.3V 256K x 16/18 pipeline burst synchronous SRAM 3.3V 256K×18 Ppipeline Burst Synchronous SRAM(3.3V 256K×18流水线脉冲同步静态RAM) 3.3 256K × 18 Ppipeline突发同步SRAM的电压(3.3V 256K × 18流水线脉冲同步静态内存) 3.3V 256K 】 16/18 pipeline burst synchronous SRAM 3.3V 256K x 16 pipeline burst synchronous SRAM, clock speed - 133MHz 3.3V 256K × 16/18 pipeline burst synchronous SRAM
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor ...
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IS61NLP25636 IS61NLP25632 IS61NLP51218 IS61NP51218 |
256K x 32 pipeline no wait state bus sram 256K x 32/ 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K x 32 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
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ISSI[Integrated Silicon Solution Inc] ISSI[Integrated Silicon Solution, Inc]
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IS61SPS51218T-133TQI IS61SPS51218T-150TQ IS61SPS51 |
512K X 18 CACHE SRAM, 3.8 ns, PBGA119 512K x 18 synchronous pipeline, single-cycle deselect static RAM 256K x 32 synchronous pipeline, single-cycle deselect static RAM 256K x 36 synchronous pipeline, single-cycle deselect static RAM 256K X 36 CACHE SRAM, 4 ns, PQFP100 512K X 18 CACHE SRAM, 4 ns, PQFP100
|
Integrated Silicon Solution Inc
|
MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分(12k × 8/256K × 16Falsh存储器(12k × 8/256K × 16位单5V的电源电压闪速存储器
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Fujitsu Limited Fujitsu, Ltd.
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MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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AS5SP512K18DQ AS5SP512K18DQ-30ET AS5SP512K18DQ-30I |
512K X 18 CACHE SRAM, 4 ns, PQFP100 Plastic Encapsulated Microcircuit 9Mb, 512K x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
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MICROSS COMPONENTS Austin Semiconductor
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GS88132BT-150I GS88118BGD-150I GS88118BGD-333I |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 4.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS88132BGD-150IV GS88118BD-200IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PBGA165 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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